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SiC Mosfets

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Topologie	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [A]	Nennstrom [mA]	Nennstrom [25°]	Betriebstemperatur[°C]	Produkt Feature	Produkt Status
GCMS040B120S1-E1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	SOT-227	Module	1200	37	57	0,057	42	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMS020B120S1-E1	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	SOT-227	Module	1200	20	113	0,113	81	-55 to 175	• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation	in production	Anfragen
GCMX020A120B2B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Half Bridge Module	1200	19	102	0,102	89	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX010A120B2B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Half Bridge Module	1200	9	214	0,214	186	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX010A120B3B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Half Bridge Module	1200	9	173	0,173	151	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX005A120B3B1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Half Bridge Module	1200	4,4	383	0,383	331	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX040A120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	38	53	0,053	46	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX020A120B3H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	18,1	93	0,093	81	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX020A120B2H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B2	Full Bridge Module	1200	18	102	0,102	88	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen
GCMX040A120B2H1P	SemiQ	SiC Module	SiC Mosfets	Aktive Komponenten	B3	Full Bridge Module	1200	38	56	0,056	49	-40 to 175	• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection	in production	Anfragen